• DocumentCode
    886944
  • Title

    A Manufacturable 100NS 16K X 1 Radiation Hardened CMOS SRAM

  • Author

    Lee, J.C. ; Carver, D.A. ; Cherne, R.D. ; Woodbury, D.A.

  • Author_Institution
    Harris Semiconductor P.O. Box 883, Melbourne, Florida 32901
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • Firstpage
    1530
  • Lastpage
    1534
  • Abstract
    A fast 16K X 1 bit radiation hardened asynchronous CMOS SRAM is described. The design objectives for the RAM were operation over the full -55°C to 125°C military temperature range, typical address access times of less than 100ns, and total dose hardness to 500K Rad-Si. The process, lithography, design highlights, electrical performance, and radiation characterization are presented.
  • Keywords
    Degradation; Energy consumption; Lithography; Manufacturing; Radiation hardening; Random access memory; Read-write memory; Semiconductor device manufacture; Temperature distribution; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334636
  • Filename
    4334636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886944