Title :
Advances in schottky rectifier performance
Author :
Brown, E.R. ; Young, A.C. ; Zimmerman, J. ; Kazemi, Hamed ; Gossard, A.C.
Author_Institution :
California Univ., Santa Barbara, CA
fDate :
6/1/2007 12:00:00 AM
Abstract :
In conclusion, heteroepitaxial technology has delivered a new device building block for the microwave and millimeter-wave toolbox - a single-crystal Schottky barrier diode made from a lattice matched combination of a semimetal (ErAs) and a semiconductor (InAlGaAs). This article has demonstrated how sensitive such a Schottky diode can be as a room-temperature zero-bias rectifier up to W band and addressed the fundamental device and impedance matching issues when coupled to a planar antenna in a quasi-optical package. As might be expected, the new Schottky diodes also display a very low degree of 1/f noise when used in applications that require bias or large signals, such as frequency mixers and multipliers (Young et al., 2006)
Keywords :
1/f noise; III-V semiconductors; Schottky diodes; aluminium compounds; erbium compounds; gallium arsenide; impedance matching; indium compounds; planar antennas; rectifiers; 1/f noise; ErAs; InAlGaAs; Schottky rectifier performance; W band; heteroepitaxial technology; impedance matching; microwave toolbox; millimeter-wave toolbox; planar antenna; quasioptical package; single-crystal Schottky barrier diode; zero-bias rectifier; Impedance matching; Lattices; Microwave devices; Microwave technology; Millimeter wave technology; Planar arrays; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMW.2007.365059