DocumentCode :
887153
Title :
Advances in schottky rectifier performance
Author :
Brown, E.R. ; Young, A.C. ; Zimmerman, J. ; Kazemi, Hamed ; Gossard, A.C.
Author_Institution :
California Univ., Santa Barbara, CA
Volume :
8
Issue :
3
fYear :
2007
fDate :
6/1/2007 12:00:00 AM
Firstpage :
54
Lastpage :
59
Abstract :
In conclusion, heteroepitaxial technology has delivered a new device building block for the microwave and millimeter-wave toolbox - a single-crystal Schottky barrier diode made from a lattice matched combination of a semimetal (ErAs) and a semiconductor (InAlGaAs). This article has demonstrated how sensitive such a Schottky diode can be as a room-temperature zero-bias rectifier up to W band and addressed the fundamental device and impedance matching issues when coupled to a planar antenna in a quasi-optical package. As might be expected, the new Schottky diodes also display a very low degree of 1/f noise when used in applications that require bias or large signals, such as frequency mixers and multipliers (Young et al., 2006)
Keywords :
1/f noise; III-V semiconductors; Schottky diodes; aluminium compounds; erbium compounds; gallium arsenide; impedance matching; indium compounds; planar antennas; rectifiers; 1/f noise; ErAs; InAlGaAs; Schottky rectifier performance; W band; heteroepitaxial technology; impedance matching; microwave toolbox; millimeter-wave toolbox; planar antenna; quasioptical package; single-crystal Schottky barrier diode; zero-bias rectifier; Impedance matching; Lattices; Microwave devices; Microwave technology; Millimeter wave technology; Planar arrays; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMW.2007.365059
Filename :
4213222
Link To Document :
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