Title :
A multilevel metallized DSA MOS masterslice
Author :
Ohkura, Isao ; Tomisawa, Osamu ; Nakaya, Masao ; Ohbayashi, Yoshikazu ; Nakano, Takao
Abstract :
A new LSI with high-speed capability and high-packing density for computer use has been successfully achieved within a short turnaround time by a new DSA MOS masterslice. Two-level metallization has been accomplished by the use of full plasma processes. The average gate delay time of the new masterslice was improved to 2 ns compared with 3 ns in the case of single-level metallization.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Large scale integration; Metallisation; field effect integrated circuits; integrated circuit technology; large scale integration; metallisation; Aluminum; Delay effects; Integrated circuit interconnections; Inverters; Large scale integration; Metallization; Plasma applications; Plasma density; Plasma properties; Plasma temperature;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051258
