• DocumentCode
    887495
  • Title

    A multilevel metallized DSA MOS masterslice

  • Author

    Ohkura, Isao ; Tomisawa, Osamu ; Nakaya, Masao ; Ohbayashi, Yoshikazu ; Nakano, Takao

  • Volume
    14
  • Issue
    4
  • fYear
    1979
  • Firstpage
    764
  • Lastpage
    766
  • Abstract
    A new LSI with high-speed capability and high-packing density for computer use has been successfully achieved within a short turnaround time by a new DSA MOS masterslice. Two-level metallization has been accomplished by the use of full plasma processes. The average gate delay time of the new masterslice was improved to 2 ns compared with 3 ns in the case of single-level metallization.
  • Keywords
    Field effect integrated circuits; Integrated circuit technology; Large scale integration; Metallisation; field effect integrated circuits; integrated circuit technology; large scale integration; metallisation; Aluminum; Delay effects; Integrated circuit interconnections; Inverters; Large scale integration; Metallization; Plasma applications; Plasma density; Plasma properties; Plasma temperature;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1979.1051258
  • Filename
    1051258
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=887495