DocumentCode :
887779
Title :
R-MOSFET structure based on current division
Author :
Vavelidis, Kostis ; Tsividis, Yannis
Author_Institution :
Nat. Tech. Univ. of Athens, Greece
Volume :
29
Issue :
9
fYear :
1993
fDate :
4/29/1993 12:00:00 AM
Firstpage :
732
Lastpage :
733
Abstract :
A parallel-path combination of resistors and MOSFETs is proposed for use in integrated continuous-time filters and other circuits. The technique allows continuous incremental tuning while maintaining significantly better linearity than MOSFET-only structures.
Keywords :
MOS integrated circuits; active filters; linear integrated circuits; tuning; R-MOSFET structure; continuous incremental tuning; current division; integrated continuous-time filters; linearity; parallel-path combination; resistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930491
Filename :
211234
Link To Document :
بازگشت