Title :
16K CMOS/SOS asynchronous static RAM
Author :
Dingwall, Andrew G F ; Stewart, Roger G.
Abstract :
A new CMOS/SOS `buried-contact´ process allows fabrication of dense static memory cells. The technology is applied in a 16K RAM with 1150 /spl mu/m/SUP 2/ (1.78 mil/SUP 2/) cells based on 5 /spl mu/m design rules.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; Random-access storage; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; random-access storage; CMOS logic circuits; CMOS memory circuits; CMOS process; CMOS technology; Integrated circuit interconnections; Random access memory; Read-write memory; Solid state circuits; Stacking; Switches;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051287
