Title :
Multiwavelength laser array by chemical beam epitaxy on patterned InP substrates
Author :
Kapre, R.M. ; Tsang, W.T. ; Chen, Y.K. ; Sergent, A.M.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
4/29/1993 12:00:00 AM
Abstract :
A multiwavelength laser array has been obtained through growth on patterened InP substrates using chemical beam epitaxy. This technique makes use of interfacet migration of reactant species to obtain compositional and/or thickness variation with position on a set of patterned ridges. Results obtained on
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; semiconductor growth; semiconductor laser arrays; 1560 to 1582 nm; InGaAs-InP; chemical beam epitaxy; compositional variation; interfacet migration; lasing wavelength; multiwavelength laser array; patterened InP substrates; prepatterned ridges; thickness variation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930511
