DocumentCode
887996
Title
Room temperature pulsed operation of 498 nm laser with ZnMgSSe cladding layers
Author
Itoh, Shintaro ; Okuyama, H. ; Matsumoto, Shinichi ; Nakayama, Naoyuki ; Ohata, Takuma ; Miyajima, Teruyuki ; Ishibashi, A. ; Akimoto, Katsuhiro
Author_Institution
Sony Corp. Res. Center, Yokohama, Japan
Volume
29
Issue
9
fYear
1993
fDate
4/29/1993 12:00:00 AM
Firstpage
766
Lastpage
768
Abstract
Room temperature pulsed operation of ZnCdSe/ZnSe/ZnMgSSe SCH lasers has been achieved. Blue-green stimulated emission is observed at a wavelength of 498.5 nm. The threshold current density is 2.8 kA/cm2 for the diode made by molecular beam epitaxy.
Keywords
II-VI semiconductors; cadmium compounds; claddings; magnesium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; stimulated emission; zinc compounds; 295 K; 498.5 nm; SCH lasers; ZnCdSe-ZnSe-ZnMgSSe; ZnMgSSe cladding layers; blue green stimulated emission; molecular beam epitaxy; room temperature pulsed operation; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930513
Filename
211256
Link To Document