• DocumentCode
    887996
  • Title

    Room temperature pulsed operation of 498 nm laser with ZnMgSSe cladding layers

  • Author

    Itoh, Shintaro ; Okuyama, H. ; Matsumoto, Shinichi ; Nakayama, Naoyuki ; Ohata, Takuma ; Miyajima, Teruyuki ; Ishibashi, A. ; Akimoto, Katsuhiro

  • Author_Institution
    Sony Corp. Res. Center, Yokohama, Japan
  • Volume
    29
  • Issue
    9
  • fYear
    1993
  • fDate
    4/29/1993 12:00:00 AM
  • Firstpage
    766
  • Lastpage
    768
  • Abstract
    Room temperature pulsed operation of ZnCdSe/ZnSe/ZnMgSSe SCH lasers has been achieved. Blue-green stimulated emission is observed at a wavelength of 498.5 nm. The threshold current density is 2.8 kA/cm2 for the diode made by molecular beam epitaxy.
  • Keywords
    II-VI semiconductors; cadmium compounds; claddings; magnesium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; stimulated emission; zinc compounds; 295 K; 498.5 nm; SCH lasers; ZnCdSe-ZnSe-ZnMgSSe; ZnMgSSe cladding layers; blue green stimulated emission; molecular beam epitaxy; room temperature pulsed operation; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930513
  • Filename
    211256