Title :
Room temperature pulsed operation of 498 nm laser with ZnMgSSe cladding layers
Author :
Itoh, Shintaro ; Okuyama, H. ; Matsumoto, Shinichi ; Nakayama, Naoyuki ; Ohata, Takuma ; Miyajima, Teruyuki ; Ishibashi, A. ; Akimoto, Katsuhiro
Author_Institution :
Sony Corp. Res. Center, Yokohama, Japan
fDate :
4/29/1993 12:00:00 AM
Abstract :
Room temperature pulsed operation of ZnCdSe/ZnSe/ZnMgSSe SCH lasers has been achieved. Blue-green stimulated emission is observed at a wavelength of 498.5 nm. The threshold current density is 2.8 kA/cm2 for the diode made by molecular beam epitaxy.
Keywords :
II-VI semiconductors; cadmium compounds; claddings; magnesium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; stimulated emission; zinc compounds; 295 K; 498.5 nm; SCH lasers; ZnCdSe-ZnSe-ZnMgSSe; ZnMgSSe cladding layers; blue green stimulated emission; molecular beam epitaxy; room temperature pulsed operation; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930513
