Integrated Λ-type differential negative resistance MOSFET device

Volume

14

Issue

6

fYear

1979

fDate

12/1/1979 12:00:00 AM

Firstpage

1094

Lastpage

1101

Abstract

A new type of the NELS (n-channel enhancement mode with load operated at saturation)-connected Λ-type differential negative resistant MOSFET, using the merged integrated circuit of a NELS inverter and an n-channel enhancement MOS driver, is studied both experimentally and theoretically. The principal operation of the lambda MOSFET device is characterized by the simple circuit model and device physics. The important device properties, such as the peak voltage, the peak current, the valley voltage and the negative resistance, are derived in terms of the known device parameters. Comparisons between characteristics of the fabricated device and the theoretical model are made, which show the theoretical analyses are in good agreement with the observed device characteristics.

Keywords

Insulated gate field effect transistors; Negative resistance; Semiconductor device models; insulated gate field effect transistors; negative resistance; semiconductor device models; Bipolar transistors; Capacitance; Circuit testing; Dielectric substrates; Electron devices; Frequency; MOSFET circuits; Microwave devices; Surface resistance; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1979.1051321

Filename

1051321