DocumentCode
888241
Title
Optical-gain enhancement in resonant-cavity heterojunction bipolar phototransistor through emitter-edge thinning
Author
Huang, F.Y. ; Zhou, G.L. ; Fan, Z.F. ; Gao, G.B. ; Botchkarev, A.E. ; Sverdlov, B. ; Morkoc, H.
Author_Institution
Illinois Univ., Urbana, IL, USA
Volume
29
Issue
9
fYear
1993
fDate
4/29/1993 12:00:00 AM
Firstpage
807
Lastpage
808
Abstract
The authors use a lateral emitter resistor in floating base GaAs-InGaAsAlGaAs heterojunction bipolar phototransistors to reduce the surface recombination in the vertical wall of the emitter-base junction and increase the photosensitivity at low injection levels. The same process also reduces the dark current in the reverse biased collector junction.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; phototransistors; GaAs-InGaAsAlGaAs; emitter-base junction; emitter-edge thinning; floating base; heterojunction bipolar phototransistor; lateral emitter resistor; low injection levels; optical gain enhancement; photosensitivity; resonant-cavity; reverse biased collector junction; surface recombination; vertical wall;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930539
Filename
211282
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