DocumentCode :
888397
Title :
Oscillation in p+-n-n+avalanche diodes at intermediate frequencies
Author :
Hofflinger, B.
Volume :
55
Issue :
3
fYear :
1967
fDate :
3/1/1967 12:00:00 AM
Firstpage :
425
Lastpage :
426
Abstract :
Oscillations produced with p+-n-n+silicon avalanche diodes at high current densities and low transit angles are attributed to measured small-signal negative conductances These are interpreted by theoretical studies including specific space-charge effects due to the high carrier densities occurring in this mode of operation.
Keywords :
Admittance; Band pass filters; Charge carrier processes; Coaxial components; Current density; Diodes; Electric breakdown; Ionization; Pulse measurements; Solid state circuits;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5515
Filename :
1447445
Link To Document :
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