• DocumentCode
    888397
  • Title

    Oscillation in p+-n-n+avalanche diodes at intermediate frequencies

  • Author

    Hofflinger, B.

  • Volume
    55
  • Issue
    3
  • fYear
    1967
  • fDate
    3/1/1967 12:00:00 AM
  • Firstpage
    425
  • Lastpage
    426
  • Abstract
    Oscillations produced with p+-n-n+silicon avalanche diodes at high current densities and low transit angles are attributed to measured small-signal negative conductances These are interpreted by theoretical studies including specific space-charge effects due to the high carrier densities occurring in this mode of operation.
  • Keywords
    Admittance; Band pass filters; Charge carrier processes; Coaxial components; Current density; Diodes; Electric breakdown; Ionization; Pulse measurements; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5515
  • Filename
    1447445
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=888397