DocumentCode
888472
Title
High power pulsed microwave generation in gallium arsenide
Author
Eastman, L.F.
Volume
55
Issue
3
fYear
1967
fDate
3/1/1967 12:00:00 AM
Firstpage
434
Lastpage
435
Abstract
Experimental results for a Gunn diode operated in the "LSA" mode of operation at X-band frequencies are reported. Powers as high as 33 watts have been obtained. Theoretical limits in both power and frequency for this mode of operation are also discussed.
Keywords
Diodes; Doping; Frequency; Gallium arsenide; Gunn devices; Impact ionization; Impedance; Microwave generation; Power generation; Threshold voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5522
Filename
1447452
Link To Document