Title :
Charge generation by heavy ions in power MOSFETs, burnout space predictions and dynamic SEB sensitivity
Author :
Stassinopoulos, E.G. ; Brucker, G.J. ; Calvel, P. ; Baiget, A. ; Peyrotte, C. ; Gaillard, R.
Author_Institution :
NASA/Goddard Space Flight Center, MD, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The transport, energy loss, and charge production of heavy ions in the sensitive regions of IRF 150 power MOSFETs are described. The dependence and variation of transport parameters with ion type and energy relative to the requirements for single event burnout in this part type are discussed. Test data taken with this power MOSFET are used together with analyses by means of a computer code of the ion energy loss and charge production in the device to establish criteria for burnout and parameters for space predictions. These parameters are then used in an application to predict burnout rates in a geostationary orbit for power converters operating in a dynamic mode. Comparisons of rates for different geometries in simulating SEU (single event upset) sensitive volumes are presented
Keywords :
aerospace testing; insulated gate field effect transistors; ion beam effects; power transistors; radiation hardening (electronics); semiconductor device testing; SEU sensitive volumes simulation; burnout space predictions; charge production; dynamic single event burnout sensitivity; geostationary orbit; heavy ions; ion energy loss; power converters; space predictions; Application software; Energy loss; Geometry; MOSFETs; Power generation; Production; Single event upset; Solid modeling; Space charge; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
