Title :
An Investigation of the Potential of MOS Transistor Memories
Author :
Pleshko, P. ; Terman, L.M.
Author_Institution :
Thomas J. Watson Research Center, IBM Corporation, Yorktown Heights, N. Y.
Abstract :
The design and performance characteristics of a 128X64 MOS transistor memory is given. The storage cell used operates with a low standby power, 0.1 mW. The memory operates with a 12-ns access time, 35-ns read cycle time, and a 60-ns write cycle time.
Keywords :
Costs; Flip-flops; Integrated circuit technology; Logic devices; MOS devices; MOSFETs; Read-write memory; Voltage; Writing;
Journal_Title :
Electronic Computers, IEEE Transactions on
DOI :
10.1109/PGEC.1966.264348
