DocumentCode :
888844
Title :
High power linearized RF phase shifter using anti-series diodes
Author :
Keerti, Arvind ; Xiang, Junyang ; Pham, Anh-Vu
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Volume :
16
Issue :
4
fYear :
2006
fDate :
4/1/2006 12:00:00 AM
Firstpage :
200
Lastpage :
202
Abstract :
We present the design and development of a new reflection-type phase shifter (RTPS) that uses anti-series diodes to achieve high linear output power. Using this topology, the PS provides a continuous phase shift of 180° at 1.88GHz. The measured 1-dB compressed RF output power (P1 dB) available from the PS is greater than 28dBm over the entire phase-control range.
Keywords :
UHF phase shifters; high-voltage engineering; network topology; semiconductor diodes; 1.88 GHz; anti-series diodes; high linear output power; high power linearized RF phase shifter; phase control range; reflection type phase shifter; Capacitance; Diodes; Distortion measurement; Linearity; Phase measurement; Phase shifters; Power generation; Power measurement; Radio frequency; Varactors; Anti-series; diode; distortion; high linearity; high power; reflection-type phase shifter (RTPS); varactor;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2006.872121
Filename :
1613895
Link To Document :
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