Title :
Electronic component preview of low dose rate behavior [HCMOS devices]
Author :
David, J.P. ; Barillot, C.
Author_Institution :
CERT, ONERA, Toulouse, France
fDate :
12/1/1992 12:00:00 AM
Abstract :
An effort was made to evaluate Texas Instruments HCMOS devices under total dose irradiation, for space applications. The parameter degradations for a dose rate of 8 krad/h are presented. The postirradiation effects at 293 K were recorded for all devices for about one year. Postirradiation effects (PIEs) were observed, and their kinetics are described. Dose rate effects are presented in a discussion of total dose simulation procedures. Thermal annealing was performed with a method similar to the thermally stimulated current method
Keywords :
CMOS integrated circuits; aerospace instrumentation; annealing; flip-flops; gamma-ray effects; integrated circuit testing; logic gates; logic testing; radiation hardening (electronics); 293 K; AND gates; HCMOS devices; NAND gates; counters; flip-flops; gamma irradiation; invertors; low dose rate behavior; parameter degradations; postirradiation effects; space applications; thermal annealing; total dose irradiation; Annealing; Circuit testing; Degradation; Electronic components; Instruments; Ionizing radiation; Kinetic theory; Performance evaluation; Temperature; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
