Silicon carbide JFET radiation response

Author

McGarrity, J.M. ; McLean, F.B. ; DeLancey, W.M. ; Palmour, J. ; Carter, C. ; Edmond, J. ; Oakley, R.E.

Author_Institution

Harry Diamond Labs., Adelphi, MD, USA

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1974

Lastpage

1981

Abstract

Total dose and neutron-induced displacement damage effect studies are reported for n-channel, 2-μm channel length, depletion mode junction-field-effect-transistors (JFETs) fabricated on 6H-silicon carbide. Very little effect was observed on device characteristics for total dose ionizing radiation for doses up to 100 Mrads(Si), but the devices were significantly degraded after a neutron fluence of 10¹⁶ n/cm². A value of 4.5±0.5 carriers/cm³/neutrons/cm was obtained for the carrier removal rate from neutron irradiation. The results offer promise for SiC devices to be used in applications which combine high-temperature and radiation environments, where the use of Si and GaAs technologies is limited

Keywords

gamma-ray effects; junction gate field effect transistors; neutron effects; radiation hardening (electronics); semiconductor materials; silicon compounds; 100 Mrad; 2 micron; JFET; SiC devices; carrier removal rate; channel length; depletion mode; gamma irradiation; n-channel; neutron-induced displacement damage; radiation response; total dose effects; wide bandgap semiconductor; Ceramics; Degradation; FETs; Gallium arsenide; Light emitting diodes; Neutrons; Semiconductor diodes; Semiconductor materials; Silicon carbide; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211393

Filename

211393