Total dose hardness of bonded SOI wafers

Author

McKitterick, John B. ; Caviglia, Anthony ; Maszara, W.P.

Author_Institution

Alied-Signal Aerosp. Technol. Center, Columbia, MD, USA

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2098

Lastpage

2102

Abstract

The response of the buried oxide in bonded and etched-back silicon-on-insulator (SOI) wafers to radiation doses up to 2 Mrad(Si) was measured. The results indicate that the hardness of the buried oxide can be very good, at least that of a good thermally grown oxide, with only small effects from the bond. The amount of charge created in the buried oxide was independent of the thickness of the buried oxide. The buried oxide can easily be made hard enough to prevent back-channel turn-on in nonfully-depleted FETs at doses of at least 2 Mrad(Si)

Keywords

MOS integrated circuits; gamma-ray effects; insulated gate field effect transistors; radiation hardening (electronics); semiconductor-insulator boundaries; wafer bonding; 2 Mrad; BESOI; NMOS transistors; Si-SiO₂; back-channel turn-on; bond and etchback SOI; bonded SOI wafers; buried oxide; gamma irradiation; nonfully-depleted FETs; total dose hardness; Annealing; CMOS process; Capacitors; Etching; FETs; Insulation; Silicon on insulator technology; Temperature; Thermal degradation; Wafer bonding;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211408

Filename

211408