• DocumentCode
    889165
  • Title

    Anomalous radiation effect in p-channel MOSFET´s under electron irradiation

  • Author

    Newman, Phillip A. ; Wannemacher, Harry

  • Author_Institution
    NASA Goddard Space Flight Center, Greenbelt, Md.
  • Volume
    55
  • Issue
    4
  • fYear
    1967
  • fDate
    4/1/1967 12:00:00 AM
  • Firstpage
    562
  • Lastpage
    562
  • Abstract
    An anomalous shift in the gate threshold voltage of high-transconductance p-channel MOSFET´s has been observed during exposure to space-like radiation of 2 × 1012electrons/cm2that is two and one half to three times its saturation value at 2 × 1014electrons/cm2and is five to seven times its pre-irradiation value.
  • Keywords
    Current measurement; Diodes; Electrons; FETs; MOSFETs; Metal-insulator structures; Radiation effects; Softening; Threshold voltage; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5588
  • Filename
    1447518
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=889165