DocumentCode
889185
Title
Hydrogenation of InN and InGaN
Author
Lee, J.W. ; Pearton, S.J. ; MacKenzie, J.D. ; Abernathy, C.R.
Author_Institution
Florida Univ., Gainesville, FL, USA
Volume
31
Issue
17
fYear
1995
fDate
8/17/1995 12:00:00 AM
Firstpage
1512
Lastpage
1514
Abstract
Electrical passivation by atomic hydrogen of native donors in epitaxial InN and InGaN has been studied as a function of the hydrogen plasma process parameters. In electron cyclotron resonance discharges, the passivation efficiency increases with microwave power but decreases with pressure. The InN surface is susceptible to degradation by preferential loss of N during the hydrogenation. The reactivation of the donors in both materials occurs with the same characteristics around ~500°C, suggesting a common origin
Keywords
III-V semiconductors; gallium compounds; indium compounds; passivation; plasma applications; semiconductor epitaxial layers; 500 C; ECR discharges; InGaN; InN; atomic H; donor reactivation; electrical passivation; electron cyclotron resonance discharges; epitaxial InGaN; epitaxial InN; hydrogen plasma process parameters; hydrogenation; microwave power; passivation efficiency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951027
Filename
464093
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