DocumentCode
889228
Title
Double-Layer Resist Films for Submicrometer Electron-Beam Lithography
Author
Todokoro, Yoshihiro
Volume
15
Issue
4
fYear
1980
fDate
8/1/1980 12:00:00 AM
Firstpage
508
Lastpage
513
Abstract
This paper describes a double-layer resist-film technique for submicrometer electron-beam lithography. The results of computer simulation and lithography experiments carried out on PMMA/MPR (LO/HI) and MPR/PMMA (HI/LO) double-layer films are reported in full detail. It is shown that an undercut profile suitable for the lift-off processing can be reproducibly obtained by the use of the LO/HI structure over a wide range of electron-beam exposure dose, while the HI/LO structure is of great advantage in the fabrication of lift-off metal gates with a mushroom-like cross section.
Keywords
Electron beam lithography; Integrated circuit technology; Large scale integration; Computational modeling; Computer simulation; Fabrication; Gallium arsenide; Lithography; MOSFET circuits; Resists; Silicon; Substrates; Very large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1980.1051430
Filename
1051430
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