DocumentCode
889262
Title
X-ray lithography effects on MOS oxides
Author
Lelis, A.J. ; Oldham, T.R.
Author_Institution
US Army Res. Lab., Adelphi, MD, USA
Volume
39
Issue
6
fYear
1992
fDate
12/1/1992 12:00:00 AM
Firstpage
2204
Lastpage
2210
Abstract
N- and p-channel MOSFETs were subjected to hot-carrier injection to compare the reliability of devices with and without exposure to simulated X-ray lithography. No significant electrical effects due to hot-carrier injection under realistic operating conditions were observed. This result suggests that neutral electron trap charging may not be as serious a problem as has been previously thought
Keywords
X-ray effects; X-ray lithography; electron traps; hole traps; hot carriers; insulated gate field effect transistors; interface electron states; reliability; semiconductor device testing; CMOS devices; X-ray lithography effects; electrical effects; hole trapping; hot-carrier injection; interface trap generation; n-channel MOSFET; neutral electron trap charging; p-channel MOSFETs; reliability; Annealing; Electron optics; Electron traps; Hot carrier injection; Ionizing radiation; Laboratories; MOS devices; MOSFETs; Microelectronics; X-ray lithography;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.211422
Filename
211422
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