DocumentCode
889264
Title
Quantitative Evaluation of Proximity Effect in Raster-Scan Exposure System for Electron-Beam Lithography
Author
Nakase, Makoto ; Yoshimi, Makoto
Volume
15
Issue
4
fYear
1980
fDate
8/1/1980 12:00:00 AM
Firstpage
525
Lastpage
530
Abstract
The proximity effect in a raster-scan for electron-beam lithography system was evaluated by Monte Carlo calculation and verified by experiments. It was revealed that the reduction in the beam diameter below the scanning pitch, which links into the shortening of drawing time, is more effective in decreasing the proximity effect than the reduction in the resist thickness. From the calculated results, it was found that the error in Iinewidth definition due to the proximity effect was less than 10 percent at a linewidth of 1.5μ m with scanning pitch of 0.5 μm, beam diameter of 0.2 μm, and PMMA resist of 1.0-μm thickness.
Keywords
Electron beam lithography; Monte Carlo methods; Proximity effect; Application software; Computer errors; Electron beams; Error correction; Geometry; Lithography; Monte Carlo methods; Proximity effect; Resists; Scattering;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1980.1051433
Filename
1051433
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