Title :
Improvement of radiation hardness due to aging of fluorinated and chlorinated SiO2/Si MOS capacitors
Author :
Wang, Xie-wen ; Wang, Yu ; Wang, Dechang ; Ma, Tso-Ping
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The radiation hardness of MOS capacitors containing fluorinated or chlorinated SiO2 has been found to improve gradually when they are stored at room temperature for a long period of time after their fabrication before irradiation. This beneficial aging process can be accelerated by raising the storage temperature. No such aging effect has been observed in the control samples that do not contain F or Cl. A tentative explanation based on the gradual migration of F or Cl species and the formation of Si-F or Si-Cl bonds is proposed
Keywords :
X-ray effects; ageing; chlorine; fluorine; interface electron states; metal-insulator-semiconductor devices; radiation hardening (electronics); silicon; silicon compounds; MOS capacitors; Si-Cl bonds; Si-F bonds; SiO2:Cl-Si; SiO2:F-Si; X-ray irradiation; aging; interface trap distribution; radiation hardness; storage temperature; Acceleration; Aging; Annealing; Fabrication; Hafnium; Ion implantation; MOS capacitors; Microelectronics; Oxidation; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
