MOS Area Sensor: Part I - Design Consideration and Performance of an n-p-n Structure 484 x 384 Element Color MOS Imager

The design consideration and performance of an n-p-n structure 484 X 384 element MOS imager is described. The imager has a photodiode array and scanners separately integrated on different p wells. The horizontal scanner, consisting of bootstrapping type non-inverting circuits, features high speed and low noise. The maximum scan rate of the scanner is ~15 MHz. The vertical scanner, consisting of inverting circuits, has a wide dynamic operating range. It can operate stably under an intense illumination of ~1500 lx. Analysis of the MOS switch with a photodiode is also carried out. The 484 X 384 imager has shown excellent performances: signal to fixed-pattern-noise ratio of 54 dB, horizontal resolution of 260 TV lines, vertical resolution of 350 TV lines, well-balanced spectral response, and antiblooming.