Recombination mechanisms in 1.3-μm InAs quantum-dot lasers

Author

Sandall, I.C. ; Smowton, P.M. ; Walker, C.L. ; Liu, H.Y. ; Hopkinson, M. ; Mowbray, D.J.

Author_Institution

Sch. of Phys. & Astron., Cardiff Univ., UK

Volume

18

Issue

8

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

965

Lastpage

967

Abstract

We measure, in real units, the radiative and total current density in high performance 1.3-μm InAs quantum-dot-laser structures. Despite very low threshold current densities, significant nonradiative recombination (/spl sim/80% of the total recombination) occurs at 300 K with an increasing fraction at higher current density and higher temperature. Two nonradiative processes are identified; the first increases approximately linearly with the radiative recombination while the second increases at a faster rate and is associated with the loss of carriers to either excited dot states or the wetting layer.

Keywords

current density; excited states; indium compounds; laser transitions; quantum dot lasers; semiconductor device measurement; 1.3 mum; 300 K; InAs; InAs quantum-dot lasers; current density; excited dot states; radiative recombination; wetting layer; Current density; Current measurement; Density measurement; Extraterrestrial measurements; Quantum dot lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature; Threshold current; Quantum dots (QDs); semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.873560

Filename

1613985