Detection of defects on the surface of microelectronic structures

Author

Sischka, Dirk ; Bisek, Reimund

Author_Institution

Bergische Univ., Gesamthochschule, Wuppertal, West Germany

Volume

36

Issue

1

fYear

1989

fDate

1/1/1989 12:00:00 AM

Firstpage

8

Lastpage

13

Abstract

Many types of defects on photolithographic masks can be detected by using only local pattern properties specified by general design rules. No comparison between adjacent chip images or an external data base is required, eliminating the need for high metrological precision. A number of detection criteria such as local deviations from straightness or admissible contour angles were tested on simulated images containing various defect types. Usable algorithms that could be implemented as high-speed circuits permitting data throughputs at TV rates are discussed

Keywords

fault location; integrated circuit testing; masks; photolithography; IC masks; admissible contour angles; algorithms; detection criteria; high-speed circuits; local deviations from straightness; local pattern properties; microelectronic structures; photolithographic masks; surface defect detection; Circuit simulation; Circuit testing; Electron beams; Humans; Ice; Inspection; Manufacturing; Microelectronics; Shape; TV;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.21170

Filename

21170