DocumentCode
890345
Title
Waveguiding in epitaxial 3C-silicon carbide on silicon
Author
Jackson, S.M. ; Reed, G.T. ; Reeson, K.J.
Author_Institution
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Volume
31
Issue
17
fYear
1995
fDate
8/17/1995 12:00:00 AM
Firstpage
1438
Lastpage
1439
Abstract
Waveguiding in 3C-silicon carbide has been observed following ion implantation of oxygen. The losses have been measured at different stages of the anneal process
Keywords
annealing; ion implantation; optical fabrication; optical losses; optical planar waveguides; semiconductor epitaxial layers; semiconductor materials; silicon compounds; O ion implantation; Si; SiC-Si; anneal process; cubic SiC; epitaxial 3C-SiC on silicon; losses; waveguiding;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950997
Filename
464164
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