A micropower, small input-to-output delay, high-voltage bipolar driver/demultiplexer IC

Describes a 2.6/spl times/2.6 mm bipolar driver/demultiplexer integrated circuit used to selectively switch one of six off-chip MOS devices. A carefully chosen chip architecture coupled with novel circuit techniques has reduced power consumption by more than two orders of magnitude over currently available micropower drivers that offer comparable performance. A low-voltage bipolar process (BV/SUB CEO/>20 V) that utilizes an extra deep n/SUP +/ diffusion (d-n/SUP +/) combines I/SUP 2/L and linear circuitry to achieve a micropower function (<100 /spl mu/W) with small input-to-output delay (<400 ns) and high-voltage capability (40 V max).