DocumentCode
890359
Title
Circuit simulations of alpha-particle-induced soft errors in MOS dynamic RAMs
Author
Mcpartland, Richard J.
Volume
16
Issue
1
fYear
1981
fDate
2/1/1981 12:00:00 AM
Firstpage
31
Lastpage
34
Abstract
Sense-amplifier column and cell alpha particle hits have been simulated for a 64K MOS dynamic RAM using SPICE, a circuit simulation program. Simulations investigate the influence of circuit, timing, and layout on the possibility of alpha soft errors. The column to sense amplifier impedance is found to strongly influence the likelihood of soft errors. Results are useful for designing for alpha immunity.
Keywords
Alpha-particle effects; Circuit analysis computing; Digital simulation; Field effect integrated circuits; Integrated memory circuits; Random-access storage; alpha-particle effects; circuit analysis computing; digital simulation; field effect integrated circuits; integrated memory circuits; random-access storage; Alpha particles; Capacitors; Circuit simulation; Computer errors; Computer simulation; DRAM chips; P-n junctions; Parasitic capacitance; Random access memory; SPICE;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1981.1051532
Filename
1051532
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