Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs

Author

El Hamid, Hamdy Abd ; Guitart, Jaume Roig ; Iníguez, Benjamin

Author_Institution

Departament d´´ Enginyeria Electronica, Elektrica i Automatica, Univ. Rovira i Virgili, Tarragona

Volume

54

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

1402

Lastpage

1408

Abstract

We have developed analytical physically based models for the threshold voltage [including the drain-induced barrier lowering (DIBL) effect] and the subthreshold swing of undoped symmetrical double-gate (DG) MOSFETs. The models are derived from an analytical solution of the 2-D Poisson equation in which the electron concentration was included. The models for DIBL, subthreshold swing, and threshold voltage roll-off have been verified by comparison with 2-D numerical simulations for different values of channel length, channel thickness, and drain-source voltage; very good agreement with the numerical simulations has been observed

Keywords

MOSFET; Poisson equation; semiconductor device models; 2D Poisson equation; 2D numerical simulations; DIBL; channel length; channel thickness; device modeling; drain induced barrier lowering; drain-source voltage; electron concentration; subthreshold swing models; threshold voltage roll-off; undoped symmetric double-gate MOSFET; Analytical models; Degradation; Digital integrated circuits; Electrostatics; Integrated circuit modeling; MOSFETs; Numerical simulation; Poisson equations; Semiconductor films; Threshold voltage; Device modeling; MOSFET; double gate (DG); downscaling; drain induced barrier lowering (DIBL); subthreshold swing; threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.895856

Filename

4215170