DocumentCode
890520
Title
Composite n-MOSFET for submicrometre circuits
Author
Ge, D.Y. ; Hwang, N. ; Forbes, L.
Author_Institution
Oregon State Univ., Corvallis, OR, USA
Volume
29
Issue
7
fYear
1993
fDate
4/1/1993 12:00:00 AM
Firstpage
623
Lastpage
625
Abstract
Proposes a new composite n-MOS device to replace conventional n-channel devices in submicrometre amplifier circuits whenever a large drain-source voltage is encountered. The composite device improves the lifetime of a simple amplifier by eight orders of magnitude. Increasing the device channel length to reduce the effects of hot electron degradation has also been investigated as an alternative in contrast to the composite device, but is demonstrated to be an inferior design choice.
Keywords
MOS integrated circuits; amplifiers; hot carriers; insulated gate field effect transistors; reliability; composite n-MOS device; composite n-MOSFET; device channel length; device reliability; hot-electron degradation reduction; large drain-source voltage; lifetime increase; submicrometre amplifier circuits; submicrometre circuits;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930417
Filename
211839
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