DocumentCode
890562
Title
L-band epitaxial Gunn oscillators
Author
Berson, B.E. ; Narayan, S.Y.
Volume
55
Issue
6
fYear
1967
fDate
6/1/1967 12:00:00 AM
Firstpage
1078
Lastpage
1078
Abstract
Gunn oscillators have been made from epitaxially grown GaAs n+-n-n+"sandwich" structures. Peak powers up to 56 watts have been obtained in L-band with an efficiency of 15 percent. The positive temperature coefficient of resistance of the epitaxial material provides a built-in protection against thermal runaway.
Keywords
Gallium arsenide; Gunn devices; L-band; Ohmic contacts; Oscillators; Packaging; Protection; Radio frequency; Stability; Temperature;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5726
Filename
1447656
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