• DocumentCode
    890572
  • Title

    0.2 mu m gate length pseudomorphic HIGFET using novel selfaligned TiPtAu/WN T-gate technology for high-speed digital and millimetre wave applications

  • Author

    Fawaz, Hala ; Gest, J. ; Francois, M. ; El-Idrissi, H. ; Zimmermann, J.

  • Author_Institution
    Univ. des Sci. et Technol. de Lille, Villeneuve, France
  • Volume
    29
  • Issue
    7
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    615
  • Lastpage
    617
  • Abstract
    A selfaligned refractory gate HIGFET technology is described. A three-layer resist process has been used for gate TiPtAu thickening, making high-speed digital structures compatible with low noise microwave applications. Pseudomorphic HIGFETs with 0.2 mu m gate length exhibit a maximum transconductance of 600 mS/mm and a maximum oscillation frequency fmax of 100 GHz.
  • Keywords
    dielectric thin films; gold alloys; insulated gate field effect transistors; platinum alloys; solid-state microwave devices; titanium alloys; tungsten compounds; 0.2 micron; 100 GHz; T-gate; TiPtAu-WN; gate length; high-speed digital structures; low noise microwave device; maximum oscillation frequency; microwave applications; millimetre wave applications; pseudomorphic HIGFET; refractory gate; self-aligned gate; three-layer resist process; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930412
  • Filename
    211844
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=890572