Title :
0.2 mu m gate length pseudomorphic HIGFET using novel selfaligned TiPtAu/WN T-gate technology for high-speed digital and millimetre wave applications
Author :
Fawaz, Hala ; Gest, J. ; Francois, M. ; El-Idrissi, H. ; Zimmermann, J.
Author_Institution :
Univ. des Sci. et Technol. de Lille, Villeneuve, France
fDate :
4/1/1993 12:00:00 AM
Abstract :
A selfaligned refractory gate HIGFET technology is described. A three-layer resist process has been used for gate TiPtAu thickening, making high-speed digital structures compatible with low noise microwave applications. Pseudomorphic HIGFETs with 0.2 mu m gate length exhibit a maximum transconductance of 600 mS/mm and a maximum oscillation frequency fmax of 100 GHz.
Keywords :
dielectric thin films; gold alloys; insulated gate field effect transistors; platinum alloys; solid-state microwave devices; titanium alloys; tungsten compounds; 0.2 micron; 100 GHz; T-gate; TiPtAu-WN; gate length; high-speed digital structures; low noise microwave device; maximum oscillation frequency; microwave applications; millimetre wave applications; pseudomorphic HIGFET; refractory gate; self-aligned gate; three-layer resist process; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930412
