A Planar-Gate High-Conductivity IGBT (HiGT) With Hole-Barrier Layer

Author

Mori, Mutsuhiro ; Oyama, Kazuhiro ; Arai, Taiga ; Sakano, Junichi ; Nishimura, Yoshitaka ; Masuda, Koutarou ; Saito, Katsuaki ; Uchino, Yoshihiro ; Homma, Hideo

Author_Institution

Hitachi Ltd., Hitachi

Volume

54

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

1515

Lastpage

1520

Abstract

A high-conductivity insulated gate bipolar transistor (IGBT) (HiGT) with a double diffused MOS structure and an n-type hole-barrier layer surrounding a p-layer (planar HiGT) is presented. The hole-barrier layer prevents the holes from flowing into the p-layer and stores them in the n-layer. The planar HiGT provides a better tradeoff between collector-emitter saturation voltage [VcE(sat)] and turn-off loss than conventional IGBTs, regardless of the injection efficiency of the p-layer on the collector side, while it maintains a high blocking voltage by controlling the sheet carrier concentration of the hole-barrier layer. The planar HiGT has a tough short-circuit capability of more than 10 mus at 125degC, with a saturation current similar to that of conventional IGBTs.

Keywords

MIS structures; insulated gate bipolar transistors; HiGT; IGBT; MOS structure; collector-emitter saturation voltage; hole-barrier layer; insulated gate bipolar transistor; temperature 125 C; Bipolar transistors; Charge carrier density; Current density; Fabrication; Insulated gate bipolar transistors; Inverters; Low voltage; Motor drives; Power supplies; Voltage control; Collector–emitter saturation voltage; insulated gate bipolar transistor (IGBT); short-circuit capability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.895874

Filename

4215184