• DocumentCode
    890612
  • Title

    Germanium MOSFETs With CeO2/HfO2/ TiN Gate Stacks

  • Author

    Nicholas, Gareth ; Brunco, David P. ; Dimoulas, A. ; Van Steenbergen, Jan ; Bellenger, Florence ; Houssa, Michel ; Caymax, Matty ; Meuris, Marc ; Panayiotatos, Y. ; Sotiropoulos, Andreas

  • Author_Institution
    Interuniv. Microelectron. Center, Leuven
  • Volume
    54
  • Issue
    6
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    1425
  • Lastpage
    1430
  • Abstract
    Long-channel Ge pMOSFETs and nMOSFETs were fabricated with high-kappa CeO2/HfO2/TiN gate stacks. CeO2 was found to provide effective passivation of the Ge surface, with low diode surface leakage currents. The pMOSFETs showed a large I ON/IOFF ratio of 106, a subthreshold slope of 107 mV/dec, and a peak mobility of approximately 90 cm2 /Vmiddots at 0.25 MV/cm. The nMOSFET performance was compromised by poor junction formation and demonstrated a peak mobility of only ~3 cm2/Vmiddots but did show an encouraging ION/I OFF ratio of 105 and a subthreshold slope of 85 mV/dec
  • Keywords
    MOSFET; cerium compounds; elemental semiconductors; germanium; hafnium compounds; high-k dielectric thin films; leakage currents; passivation; titanium compounds; CeO2-HfO2-TiN; MOSFET; dielectric films; high-K gate stacks; leakage currents; surface passivation; Dielectrics; Electron mobility; Germanium; Hafnium oxide; Laboratories; MOS devices; MOSFETs; Microelectronics; Thin film transistors; Tin; $hbox{CeO}_{2}$; $hbox{HfO}_{2}$ ; MOSFET; dielectric films; germanium; high-$kappa$;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2007.896352
  • Filename
    4215186
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=890612