DocumentCode
890767
Title
Strain effect on K factor, differential gain and nonlinear gain coefficient for InGaAs/InGaAsP strained multiquantum well lasers
Author
Shimizu, J.-I. ; Kimura, Akihiro ; Naniwae, K. ; Nido, M. ; Murata, Shotaro ; Tomita, Akihisa ; Suzuki, A.
Author_Institution
NEC Corp., Ibaraki, Japan
Volume
29
Issue
7
fYear
1993
fDate
4/1/1993 12:00:00 AM
Firstpage
579
Lastpage
581
Abstract
The strain effect on the K factor, the differential gain and the nonlinear gain coefficient for InGaAs/InGaAsP tensile-strained and compressive-strained multiquantum well (MQW) lasers is experimentally investigated from the intrinsic modulation response. The differential gain increases with an increase in strain for both types of laser. The strain dependence of the nonlinear gain coefficient is not as high as that of the differential gain. Therefore, the K factor for strained MQW lasers mainly results from the differential gain.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor lasers; InGaAs-InGaAsP; K factor; compressive-strained; differential gain; intrinsic modulation response; multiquantum well; nonlinear gain coefficient; semiconductor lasers; strain dependence; strained MQW lasers; tensile-strained;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930389
Filename
211867
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