Title :
Tunneling currents via Au levels in Ge Esaki diodes
Author :
Streetman, B.G. ; Sah, C.T.
fDate :
6/1/1967 12:00:00 AM
Abstract :
Esaki diodes have been fabricated on n-type Ge diffused with Au. A hump is observed in the valley of the I-V characteristics due to two-step interactions with the Au levels.
Keywords :
Contact resistance; Cutoff frequency; Electrical resistance measurement; Frequency estimation; Gallium arsenide; Gold; Schottky diodes; Semiconductor diodes; Semiconductor materials; Tunneling;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5750
