DocumentCode
890785
Title
Measurement of epitaxial layer resistivity using MOS capacitance method
Author
Anantha, N.G.
Volume
55
Issue
6
fYear
1967
fDate
6/1/1967 12:00:00 AM
Firstpage
1108
Lastpage
1108
Abstract
Metal-oxide-semiconductor (MOS) capacitance-voltage measurements are used to determine the epitaxial layer resistivity. This method can be used to characterize epitaxial layers without removing the oxide present on the as-received wafers. The results are compared with that obtained by diode-capacitance technique and point contact method.
Keywords
Aluminum; Atomic layer deposition; Capacitance measurement; Conductivity; Diodes; Epitaxial layers; Impurities; Probes; Semiconductor epitaxial layers; Silicon;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5752
Filename
1447682
Link To Document