Title :
174-nm mode spacing in dual-wavelength semiconductor laser using nonidentical InGaAsP quantum wells
Author :
Huang, Chi-Chia ; Cheng, Chin-Hui ; Su, Yi-Shin ; Lin, Ching-Fuh
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A very wide tuning range of dual-wavelength semiconductor lasers with properly designed nonidentical InGaAsP quantum wells is reported. As the external cavity of reflected-type grating telescope configuration is well aligned, the dual-wavelength operation can be achieved with a record wavelength separation as large as 174 nm (25 THz). The wide separation of two wavelengths is possible due to a proper modification of the external-cavity configuration and reduced gain competition of laser modes.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser modes; laser tuning; optical design techniques; quantum well lasers; semiconductor optical amplifiers; semiconductor quantum wells; InGaAsP; InGaAsP quantum wells; broad-band wavelength tuning; dual-wavelength semiconductor laser; external cavity; laser modes; mode spacing; optical amplifier; quantum-well laser; reflected-type grating telescope configuration; Fiber lasers; Laser modes; Laser theory; Laser tuning; Optical interferometry; Quantum well lasers; Semiconductor laser arrays; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.821050
