Passive mode locking of InAlGaAs 1.3-μm strained quantum wells extended cavity laser fabricated by quantum-well intermixing

Author

Robert, F. ; Bryce, A.C. ; Marsh, J.H. ; SpringThorpe, A.J. ; White, J.K.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, UK

Volume

16

Issue

2

fYear

2004

Firstpage

374

Lastpage

376

Abstract

We demonstrate continuous-wave operation and passive mode locking of extended cavity lasers fabricated in 1.3-μm InAlGaAs strained multiple quantum-wells structure. Modal losses were measured for the passive section fabricated by quantum-well intermixing. Pulse duration of 1.7 ps was deduced from intensity autocorrelation measurement.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; laser mode locking; laser modes; optical fabrication; optical losses; optical pulse generation; quantum well lasers; semiconductor quantum wells; 1.3 mum; 1.7 ps; InAlGaAs; InAlGaAs strained quantum wells; continuous-wave operation; extended cavity laser; intensity autocorrelation measurement; modal losses; mode-locked lasers; passive mode locking; pulse generation; quantum-well intermixing; semiconductor lasers; Conducting materials; Etching; Laser mode locking; Optical device fabrication; Optical materials; Photonic band gap; Pulse measurements; Quantum well lasers; Semiconductor lasers; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.823134

Filename

1266428