Electrical and Temperature Stress Effects on Class-AB Power Amplifier Performances

Author

Yu, Chuanzhao ; Yuan, J.S.

Author_Institution

Freescale Semicond. Inc, Boca Raton, FL

Volume

54

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

1346

Lastpage

1350

Abstract

Normalized degradations of drain efficiency and output power as a function of conduction angle, maximum drain current, and maximum output voltage are modeled. Good agreement between the model predictions and Cadence radio-frequency simulation results is obtained. The output power and efficiency of class-AB power amplifiers (PAs) degrade with channel hot electron stress due to reduced conduction angle, drain current, and output voltage. The degradation is enhanced at high temperature. In addition, the PA third-order input intercept point and adjacent channel power ratio all decrease with stress

Keywords

hot carriers; integrated circuit modelling; power amplifiers; Cadence radio-frequency simulation results; RF simulation; channel hot electron stress; class-AB power amplifier performances; conduction angle; drain efficiency; electrical stress effects; maximum drain current; maximum output voltage; temperature stress effects; Degradation; Electrons; Power amplifiers; Power generation; Predictive models; Radio frequency; Radiofrequency amplifiers; Stress; Temperature; Voltage; Class-AB power amplifier (PA); RF simulation; conduction angle; power efficiency; third-order intercept point;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.896601

Filename

4215209