DocumentCode
890885
Title
A charge-based large-signal bipolar transistor model for device and circuit simulation
Author
Jeong, Hanggeun ; Fossum, Jerry G.
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume
36
Issue
1
fYear
1989
fDate
1/1/1989 12:00:00 AM
Firstpage
124
Lastpage
131
Abstract
A model derived from one-dimensional regional analyses of ambipolar carrier transport with minimal empiricism is presented. Model verification and parameter extraction, based on test devices representative of the advanced bipolar technology, are described and used to demonstrate the predictive potential of the model. The physical model serves as a basis for seminumerical mixed-mode device/circuit simulation, as well as for a model hierarchy, in CAD applications
Keywords
bipolar transistors; electronic engineering computing; semiconductor device models; CAD; advanced bipolar technology; ambipolar carrier transport; bipolar transistor; charge based large signal model; circuit simulation; model hierarchy; one-dimensional regional analyses; parameter extraction; seminumerical mixed-mode device/circuit simulation; Bipolar transistors; Circuit simulation; Circuit testing; Computational modeling; Coupling circuits; Data mining; Helium; Parameter extraction; Predictive models; SPICE;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.21191
Filename
21191
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