Characteristics of cross-gain (XG) wavelength conversion in quantum dot semiconductor optical amplifiers

Author

Qasaimeh, Omar

Author_Institution

Dept. of Electr. Eng., Jordan Univ. of Sci. & Technol., Irbid, Jordan

Volume

16

Issue

2

fYear

2004

Firstpage

542

Lastpage

544

Abstract

Detailed theoretical analysis of cross-gain (XG) wavelength conversion in quantum dot semiconductor optical amplifier (QD-SOA) is presented. The model takes into account the effect of the excited states, the wetting layer (WL) and the nonlinear optical gain of the dots. An analytical model of the small-signal XG conversion efficiency is also derived. The XG efficiency shows strong dependence on the escape and relaxation lifetimes between the ground and excited states. The model/analysis provides insight on the escape/relaxation lifetime of QD lasers which is very important for characterizing and understanding the performance characteristics of QD devices.

Keywords

excited states; laser theory; optical wavelength conversion; quantum dot lasers; semiconductor optical amplifiers; semiconductor quantum dots; QD devices; QD lasers; QD-SOA; cross-gain wavelength conversion; escape lifetime; excited states; ground state; nonlinear optical gain; quantum dot semiconductor optical amplifiers; relaxation lifetimes; wetting layer; Analytical models; Laser excitation; Laser modes; Nonlinear optics; Optical wavelength conversion; Performance analysis; Quantum dots; Quantum mechanics; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.821047

Filename

1266484