Title :
Second breakdown—A comprehensive review
Author :
Schafft, Harry A.
Author_Institution :
National Bureau of Standards, Washington, D.C.
Abstract :
This paper is a comprehensive review of the published literature dealing with the phenomenon of second breakdown in semiconductor devices and the problems it creates in the design, fabrication, testing, and application of transistors.
Keywords :
Bipolar transistors; Circuits; Degradation; Electric breakdown; Heating; Helium; IEC; P-n junctions; Testing; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5828
