Title :
Top-emitting OLED pixel employing cathode-contact structure with a-Si:H thin-film transistors
Author :
Han, C.-W. ; Han, M.K. ; Kim, M.S. ; Nam, W.-J. ; Bae, S.-J. ; Kim, K.-Y. ; Chung, I.J.
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul
Abstract :
An active-matrix organic light emitting diode (OLED) display employing a hydrogenated amorphous silicon thin-film transistor prefers a cathode-contact structure to an anode-contact structure. A new normal top-emitting OLED employing cathode-contact structure is proposed. To implement normal OLED structure, the cathode layer on top is separated as sub-pixels by a negative photoresist separator. The current of the cathode-contact structure is maintained 20% higher after 20 h than that of the anode-contact structure during the accelerated life test.
Keywords :
amorphous semiconductors; organic light emitting diodes; photoresists; thin film transistors; active-matrix organic light emitting diode display; anode-contact structure; cathode-contact structure; hydrogenated amorphous silicon thin-film transistor; negative photoresist separator; top-emitting OLED pixel;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070706
