Experimental study of avalanche breakdown in silicon planar p-n junctions

Experimental data have been obtained which verify predictions of Sze and Gibbons that the avalanche breakdown voltage of linearly graded junctions in silicon is related to the impurity gradient at the junction by a 2/5 power law. Diodes have been fabricated using planar technology in n-type silicon covering a resistivity range of 0.03-240 Ωċcm, with breakdown voltages in the range of 7 to 1500 volts. Experimental and theoretical results agreed to within ±5 percent.