Title :
Beta measurement and beta requirement in I/sup 2/L gates
Author :
Wisted, J.M. ; Warner, R.M., Jr. ; Murray, E.M. ; Jindal, R.P.
Abstract :
A new approach to beta measurement in the inversely operated I/SUP 2/L transistor is described, one that avoids arbitrary definitions and terminal-condition specifications. The authors deactivate the lateral p-n-p by symmetrical biasing so that direct measurement of n-p-n base current becomes possible. Further measurements demonstrate the validity of this approach, and also determine the beta necessary for a desired saturation voltage.
Keywords :
Gain measurement; Integrated injection logic; gain measurement; integrated injection logic; Circuit simulation; Current supplies; Information analysis; P-n junctions; Testing; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051695
