• DocumentCode
    891987
  • Title

    Properties of Evaporated and Sputtered TaSi2 Films and the Influence of the Residual Gas Composition

  • Author

    Neppl, Franz ; Schwabe, Ulrich

  • Volume
    17
  • Issue
    2
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    138
  • Lastpage
    141
  • Abstract
    Results on the electrical resistivity, the stress, and the etching behavior of TaSi2 films evaporated under various residual gas conditions, and the correlations to changes in the crystalline structure as determined by X-ray diffractometer measurements, are presented. The influence of substrate temperature on the behavior of the evaporated TaSi2 films is discussed. For low substrate temperatures, evaporated TaSi2 films are compared to RF sputtered films. The results show that the deposition conditions have to be carefully controlled to ensure high-quality TaSi2 films.
  • Keywords
    Electronic conduction in metallic thin films; Etching; Metallisation; Sputtered coatings; Tantalum compounds; Vapour deposited coatings; Crystallization; Electric resistance; Optical films; Radio frequency; Residual stresses; Semiconductor films; Silicides; Sputtering; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1982.1051706
  • Filename
    1051706
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=891987