Neutron-induced single event upsets in static RAMS observed a 10 km flight attitude

Author

Olsen, J. ; Becher, P.E. ; Fynbo, P.B. ; Raaby, P. ; Schultz, J.

Author_Institution

Riso Nat. Lab., Roskilde, Denmark

Volume

40

Issue

2

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

74

Lastpage

77

Abstract

Observations of 14 neutron-induced single event upsets (SEUs) in static memory devices (SRAMs) at commercial aircraft flight altitudes are described. The observed SEU rate at a 10 km flight altitude based on an exposure of 160 standard 256 kb CMOS SRAMs is 4.8×10^-8 upsets/b/day. In the laboratory, 117 SRAMs of two different brands were irradiated with fast neutrons from a Pu-Be source. A total of 176 SEUs have been observed, including two SEU pairs. The upset rates from the laboratory tests are compared to those found in the airborne SRAMs

Keywords

CMOS integrated circuits; SRAM chips; aircraft instrumentation; neutron effects; 10 km; 256×10³ Byte; CMOS; SRAMs; fast neutrons; neutron-induced single event upsets; static RAMS; static memory devices; Aircraft; Computer aided manufacturing; Computer errors; Laboratories; Neutrons; Random access memory; Read-write memory; Single event transient; Single event upset; System testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.212319

Filename

212319