DocumentCode :
892091
Title :
Effects of total-dose irradiation on gate-all-around (GAA) devices
Author :
Colinge, Jean-Pierre ; Terao, Akira
Author_Institution :
Univ. Catholique de Louvain, Belgium
Volume :
40
Issue :
2
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
78
Lastpage :
82
Abstract :
The response of gate-all-around (GAA) MOS transistors to dose irradiation is quite different from that observed on other types of silicon-on-insulator (SOI) MOSFETs. In regular SOI MOSFETs, edge leakage increases substantially faster than the main transistor leakage upon creation of oxide charges due to the irradiation. The GAA MOSFET behaves in the opposite way; the shift of edge threshold voltage upon creation of charges in the oxide is smaller than that of the main transistor. As a result, a kink develops in the subthreshold characteristics of regular SOI MOSFETs upon irradiation, while the original subthreshold kink of GAA devices disappears when the device is irradiated
Keywords :
gamma-ray effects; metal-insulator-semiconductor devices; MOSFET; edge threshold voltage; gamma irradiation; gate all round devices; total-dose irradiation; Boron; Hafnium; Isolation technology; MOSFETs; Oxidation; Radiation hardening; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.212320
Filename :
212320
Link To Document :
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